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siss12dn-t1-ge3 Vishay Siliconix TrenchFET Type N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SiSS12DN-T1-GE3
siss12dn-t1-ge3 Vishay Siliconix TrenchFET Type N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SiSS12DN-T1-GE3

Vishay Siliconix TrenchFET Type N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SiSS12DN-T1-GE3

Vishay Siliconix TrenchFET Type N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SiSS12DN-T1-GE3

Manufacturer:
Vishay Siliconix
Manufacturer Part No:
SiSS12DN-T1-GE3
Enrgtech Part No:
ET100431151
Warranty:
Manufacturer
OMR 0.42
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
60A
Maximum Drain Source Voltage Vds:
40V
Series:
TrenchFET
Package Type:
PowerPAK 1212
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
2mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.1V
Typical Gate Charge Qg @ Vgs:
59nC
Maximum Power Dissipation Pd:
65.7W
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Height:
1.07mm
Length:
3.15mm
Width:
3.15 mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b816748ab.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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