Vishay Siliconix TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SiDR392DP-T1-GE3

For more information please check the datasheets.

Vishay Siliconix TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SiDR392DP-T1-GE3

Manufacturer:

Vishay Siliconix

Manufacturer Part No:

SiDR392DP-T1-GE3

Enrgtech Part No:

ET100431667

Warranty:

Manufacturer

OMR 1.39

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

100A

Maximum Drain Source Voltage Vds:

30V

Package Type:

SO-8

Series:

TrenchFET

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

900μΩ

Channel Mode:

Enhancement

Minimum Operating Temperature:

-55°C

Maximum Gate Source Voltage Vgs:

6 V

0900766b81674875.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay Siliconix TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SiDR392DP-T1-GE3

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