Vishay Siliconix Dual TrenchFET 2 Type N-Channel Power MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAIR 3 x 3

Vishay Siliconix Dual TrenchFET 2 Type N-Channel Power MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAIR 3 x 3

Manufacturer:
Manufacturer Part No:
SiZ348DT-T1-GE3
Enrgtech Part No:
ET100431668
Warranty:
Manufacturer
OMR 0.32
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Channel Type:
Type N
Product Type:
Power MOSFET
Maximum Continuous Drain Current Id:
30A
Maximum Drain Source Voltage Vds:
30V
Series:
TrenchFET
Package Type:
PowerPAIR 3 x 3
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
10mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
16.7W
Typical Gate Charge Qg @ Vgs:
12.1nC
Minimum Operating Temperature:
150°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
-55°C
Transistor Configuration:
Dual
Width:
3 mm
Height:
0.75mm
Standards/Approvals:
No
Length:
3mm
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
0900766b816748ad.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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